CETC, an active player in the Belt and Road (B&R) Initiative

Space CIC (Coverglass Interconnected Cell) GaAs Solar Cell

Gallium arsenide-based solar cells are typically favored over crystalline silicon in industry because they have a higher efficiency and degrade more slowly than silicon in the radiation present in space. The most efficient solar cells currently in production are multi-junction photovoltaic cells. CETC Solar Energy's multi-junction solar cells have contributed to thousands of satellites for over 10 countries in 30 years. ​CETC Solar Energy's latest generation solar cells and Coverglass Interconnected Cell (CIC) assemblies are the highest efficiency commercially available products in the industry. A combination of several layers of gallium arsenide, indium gallium phosphide, and germanium is used to capture more energy from the solar spectrum. The CIC assemblies manufactured at CETC Solar Energy employ the most advanced interconnect welding techniques in the industry that offer the highest reliability under severe space radiation environment and thermal stress conditions. The latest weld process capability methodologies and statistical process control are in practice at CETC Solar Energy to ensure the most consistent and reliable assembly interconnections.

High Efficiency Space CIC Solar Cell
Dimension
30.6 mm x 40.30 mm or customerized size
Substrate
Ge
Structure
GaInP2/GaAs/Ge
Thickness
175 μm
Weight
100 mg/cm2
Effective Area
12.25 cm2
Efficiency
28~29%
Type
Left / Right oblique angle
CIC Accessories
  • Si bypass diode integrated at top corner
  • Coverglass with MgF2 anti-reflective (AR) coating
  • Ag interconnector
Jsc
16.9 mA/cm2
Voc
2710 mV
Jmp
16.16 mA/cm2
Vmp
2390 mV
FF
0.845
αs
0.92 ± 0.02
εH (with coverglass)
0.82 ± 0.02
Tc of Isc
0.007 mA/cm2·°C
Tc of Voc
-6.5 mV/°C
Note: Customerized specification other than the above parameters is acceptable.

 

Ultra-High Efficiency Space CIC Solar Cell
Dimension
30.6 mm x 40.30 mm or customerized size
Substrate
Ge
Structure
GaInP2/GaAs/Ge
Thickness
140 μm
Weight
80 mg/cm2
Effective Area
12.25 cm2
Efficiency
30~31%
Type
Left / Right oblique angle
CIC Accessories
  • Si bypass diode integrated at left top or right top corner
  • Coverglass with MgF2 anti-reflective (AR) coating
  • Ag interconnector
Jsc
17.1 mA/cm2
Voc
2700 mV
Jmp
16.8 mA/cm2
Vmp
2410 mV
FF
0.87
αs
0.92 ± 0.02
εH (with coverglass)
0.80 ± 0.02
Tc of Isc
0.007 mA/cm2·°C
Tc of Voc
-6.5 mV/°C
Note: Customerized specification other than the above parameters is acceptable.

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