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Sapphire Substrate / Wafer
Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.
Special offer on 2-inch Sapphire (0001) DSP wafers:
Thickness: 300μm
TTV<5μm
BOW: -7~0μm
Miscut angle: C-axis (0001) to M (1-100) 0.2°±0.1°
Flat orientation: A-plane 0.5°
Ra<0.3nm
Available quantity: 200pcs currently in stock
Special price offer: US$9.30/pc EXW
| Specification of C-plane Sapphire Substrate, SSP/DSP | ||||||
|---|---|---|---|---|---|---|
| Crystal Material | ≥ 99.99%, High Purity, Monocrystalline Al2O3 (KY) |
|||||
| Orientation | C-axis (0001) to M (1-100) 0.2°±0.1° and C-axis (0001) to A (11-20) 0°±0.1° |
|||||
| Diameter | 2 inch (50.8mm) |
3 inch (76.2mm) |
4 inch (100mm) |
6 inch (150mm) |
8 inch (200mm) |
|
| Thickness (SSP) | 430 ± 25 μm |
430/650 ± 25 μm |
650 ± 25 μm |
1000/1300 ± 25 μm |
1000 ± 25 μm |
|
| Thickness (DSP) | 200/300/400/430 ± 25 μm |
600 ± 25 μm |
500/650 ± 25 μm |
1000 ± 25 μm |
1000 ± 25 μm |
|
| Primary Flat Length | 16.0 ± 1 mm |
22.0 ± 1 mm |
30.0 ± 1 mm |
47.5 ± 1 mm |
Notch |
|
| Primary Flat Orientation | A-place (11-20) ± 0.2° |
|||||
| SSP | TTV |
≤10 μm |
≤10 μm |
≤10 μm |
≤20 μm |
≤25 μm |
BOW |
-10~0 μm |
-10~0 μm |
-10~0 μm |
-20~0 μm |
-25~0 μm |
|
Warp |
≤10 μm |
≤15 μm |
≤15 μm |
≤25 μm |
≤30 μm |
|
| Front Surface | Epitaxy polished Ra ≤ 0.30 nm |
|||||
| Back Surface | Fine ground Ra ≤ 1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.30 nm (DSP) |
|||||
| Packaging | Packaged in a class 100 clean room environment, nitrogen atmosphere |
|||||
| Specification of Patterned Sapphire Substrate (PSS) | ||||
|---|---|---|---|---|
| Crystal Material | ≥ 99.99%, High Purity, Monocrystalline Al2O3 (KY) |
|||
| Orientation | C-axis (0001) to M (1-100) 0.2°±0.1° and C-axis (0001) to A (11-20) 0°±0.1° |
|||
| Diameter | 2 inch (50.8mm) |
4 inch (100mm) |
6 inch (150mm) |
|
| Thickness (SSP) | 430 ± 25 μm |
650 ± 25 μm |
1300 ± 25 μm |
|
| Thickness (DSP) | / |
/ |
/ |
|
| Primary Flat Length | 16.0 ± 1 mm |
30.0 ± 1 mm |
47.5 ± 1 mm |
|
| Primary Flat Orientation | A-place (11-20) ± 0.2° |
|||
| SSP | TTV |
≤10 μm |
≤10 μm |
≤20 μm |
BOW |
-10~0 μm |
-10~0 μm |
-20~0 μm |
|
Warp |
≤10 μm |
≤15 μm |
≤25 μm |
|
| Pattern Height | 1.6~1.8 μm |
|||
| Pattern Width | 2.7~2.85 μm |
|||
| Front Surface | Patterned |
|||
| Back Surface | Fine ground Ra ≤ 1.2 μm |
|||
| Packaging | Packaged in a class 100 clean room environment, nitrogen atmosphere |
|||
| Specification of A-plane Sapphire Substrate | |||
|---|---|---|---|
| Crystal Material | ≥ 99.99%, High Purity, Monocrystalline Al2O3 (KY) |
||
| Orientation | A-plane (11-20) ± 0.1° |
||
| Diameter | 2 inch (50.8mm) |
4 inch (100mm) |
|
| Thickness | 430 ± 25 μm |
650 ± 25 μm |
|
| Primary Flat Length | 16.0 ± 1 mm |
30.0 ± 1 mm |
|
| Primary Flat Orientation | M-plane ± 0.3° |
||
| SSP | TTV |
≤10 μm |
≤20 μm |
BOW |
-15~0 μm |
-25~0 μm |
|
Warp |
≤15 μm |
≤30 μm |
|
| Front Surface | Epitaxy polished Ra ≤ 0.30 nm |
||
| Back Surface | Fine ground Ra ≤ 1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.30 nm (DSP) |
||
| Packaging | Packaged in a class 100 clean room environment, nitrogen atmosphere |
||
| Specification of R-plane Sapphire Substrate | |||
|---|---|---|---|
| Crystal Material | ≥ 99.99%, High Purity, Monocrystalline Al2O3 (KY) |
||
| Orientation | R-plane (1-102) ± 0.1° |
||
| Diameter | 2 inch (50.8mm) |
4 inch (100mm) |
|
| Thickness | 430 ± 25 μm |
650 ± 25 μm |
|
| Primary Flat Length | 16.0 ± 1 mm |
30.0 ± 1 mm |
|
| Primary Flat Orientation | Counter-clockwise 45° from C-axis |
||
| SSP | TTV |
≤10 μm |
≤20 μm |
BOW |
-15~0 μm |
-25~0 μm |
|
Warp |
≤15 μm |
≤30 μm |
|
| Front Surface | Epitaxy polished Ra ≤ 0.30 nm |
||
| Back Surface | Fine ground Ra ≤ 1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.30 nm (DSP) |
||
| Packaging | Packaged in a class 100 clean room environment, nitrogen atmosphere |
||
| Specification of M-plane Sapphire Substrate | |||
|---|---|---|---|
| Crystal Material | ≥ 99.99%, High Purity, Monocrystalline Al2O3 (KY) |
||
| Orientation | M-plane (1-100) ± 0.1° |
||
| Diameter | 2 inch (50.8mm) |
4 inch (100mm) |
|
| Thickness | 430 ± 25 μm |
650 ± 25 μm |
|
| Primary Flat Length | 16.0 ± 1 mm |
30.0 ± 1 mm |
|
| Primary Flat Orientation | A-plane ± 0.3° |
||
| SSP | TTV |
≤10 μm |
≤20 μm |
BOW |
-15~0 μm |
-25~0 μm |
|
Warp |
≤15 μm |
≤30 μm |
|
| Front Surface | Epitaxy polished Ra ≤ 0.30 nm |
||
| Back Surface | Fine ground Ra ≤ 1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.30 nm (DSP) |
||
| Packaging | Packaged in a class 100 clean room environment, nitrogen atmosphere |
||
| Specification of C-plane Sapphire Substrate Off-Cut | |||
|---|---|---|---|
| Crystal Material | ≥ 99.99%, High Purity, Monocrystalline Al2O3 (KY) |
||
| Orientation | C-axis (0001) off-cut 0.5°~6° ± 0.1° toward M (1-100) or C-axis (0001) off-cut 0.5°~6° ± 0.1° toward A (11-20) |
||
| Diameter | 2 inch (50.8mm) |
4 inch (100mm) |
|
| Thickness | 430 ± 25 μm |
650 ± 25 μm |
|
| Primary Flat Length | 16.0 ± 1 mm |
30.0 ± 1 mm |
|
| Primary Flat Orientation | A-plane ± 0.3° |
||
| SSP | TTV |
≤10 μm |
≤20 μm |
BOW |
-15~0 μm |
-25~0 μm |
|
Warp |
≤15 μm |
≤30 μm |
|
| Front Surface | Epitaxy polished Ra ≤ 0.30 nm |
||
| Back Surface | Fine ground Ra ≤ 1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.30 nm (DSP) |
||
| Packaging | Packaged in a class 100 clean room environment, nitrogen atmosphere |
||
