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Sapphire Substrate / Wafer

Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.

Speicification of C-plane Sapphire Substrate, SSP/DSP
Crystal Material
≥ 99.99%, High Purity, Monocrystalline Al2O3 (KY)
Orientation
C-axis (0001) to M (1-100) 0.2°±0.1° and C-axis (0001) to A (11-20) 0°±0.1°
Diameter
2 inch (50.8mm)
3 inch (76.2mm)
4 inch (100mm)
6 inch (150mm)
8 inch (200mm)
Thickness (SSP)
430 ± 25 μm
430/650 ± 25 μm
650 ± 25 μm
1000/1300 ± 25 μm
1000 ± 25 μm
Thickness (DSP)
200/300/400/430 ± 25 μm
600 ± 25 μm
500/650 ± 25 μm
1000 ± 25 μm
1000 ± 25 μm
Primary Flat Length
16.0 ± 1 mm
22.0 ± 1 mm
30.0 ± 1 mm
47.5 ± 1 mm
Notch
Primary Flat Orientation
A-place (11-20) ± 0.2°
SSP
TTV
≤10 μm
≤10 μm
≤10 μm
≤20 μm
≤25 μm
BOW
-10~0 μm
-10~0 μm
-10~0 μm
-20~0 μm
-25~0 μm
Warp
≤10 μm
≤15 μm
≤15 μm
≤25 μm
≤30 μm
Front Surface
Epitaxy polished Ra ≤ 0.30 nm
Back Surface
Fine ground Ra ≤ 1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.30 nm (DSP)
Packaging
Packaged in a class 100 clean room environment, nitrogen atmosphere

 

Speicification of Patterned Sapphire Substrate (PSS)
Crystal Material
≥ 99.99%, High Purity, Monocrystalline Al2O3 (KY)
Orientation
C-axis (0001) to M (1-100) 0.2°±0.1° and C-axis (0001) to A (11-20) 0°±0.1°
Diameter
2 inch (50.8mm)
4 inch (100mm)
6 inch (150mm)
Thickness (SSP)
430 ± 25 μm
650 ± 25 μm
1300 ± 25 μm
Thickness (DSP)
/
/
/
Primary Flat Length
16.0 ± 1 mm
30.0 ± 1 mm
47.5 ± 1 mm
Primary Flat Orientation
A-place (11-20) ± 0.2°
SSP
TTV
≤10 μm
≤10 μm
≤20 μm
BOW
-10~0 μm
-10~0 μm
-20~0 μm
Warp
≤10 μm
≤15 μm
≤25 μm
Pattern Height
1.6~1.8 μm
Pattern Width
2.7~2.85 μm
Front Surface
Patterned
Back Surface
Fine ground Ra ≤ 1.2 μm
Packaging
Packaged in a class 100 clean room environment, nitrogen atmosphere

 

Speicification of A-plane Sapphire Substrate
Crystal Material
≥ 99.99%, High Purity, Monocrystalline Al2O3 (KY)
Orientation
A-plane (11-20) ± 0.1°
Diameter
2 inch (50.8mm)
4 inch (100mm)
Thickness
430 ± 25 μm
650 ± 25 μm
Primary Flat Length
16.0 ± 1 mm
30.0 ± 1 mm
Primary Flat Orientation
M-plane ± 0.3°
SSP
TTV
≤10 μm
≤20 μm
BOW
-15~0 μm
-25~0 μm
Warp
≤15 μm
≤30 μm
Front Surface
Epitaxy polished Ra ≤ 0.30 nm
Back Surface
Fine ground Ra ≤ 1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.30 nm (DSP)
Packaging
Packaged in a class 100 clean room environment, nitrogen atmosphere

 

Speicification of R-plane Sapphire Substrate
Crystal Material
≥ 99.99%, High Purity, Monocrystalline Al2O3 (KY)
Orientation
R-plane (1-102) ± 0.1°
Diameter
2 inch (50.8mm)
4 inch (100mm)
Thickness
430 ± 25 μm
650 ± 25 μm
Primary Flat Length
16.0 ± 1 mm
30.0 ± 1 mm
Primary Flat Orientation
Counter-clockwise 45° from C-axis
SSP
TTV
≤10 μm
≤20 μm
BOW
-15~0 μm
-25~0 μm
Warp
≤15 μm
≤30 μm
Front Surface
Epitaxy polished Ra ≤ 0.30 nm
Back Surface
Fine ground Ra ≤ 1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.30 nm (DSP)
Packaging
Packaged in a class 100 clean room environment, nitrogen atmosphere

 

Speicification of M-plane Sapphire Substrate
Crystal Material
≥ 99.99%, High Purity, Monocrystalline Al2O3 (KY)
Orientation
M-plane (1-100) ± 0.1°
Diameter
2 inch (50.8mm)
4 inch (100mm)
Thickness
430 ± 25 μm
650 ± 25 μm
Primary Flat Length
16.0 ± 1 mm
30.0 ± 1 mm
Primary Flat Orientation
A-plane ± 0.3°
SSP
TTV
≤10 μm
≤20 μm
BOW
-15~0 μm
-25~0 μm
Warp
≤15 μm
≤30 μm
Front Surface
Epitaxy polished Ra ≤ 0.30 nm
Back Surface
Fine ground Ra ≤ 1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.30 nm (DSP)
Packaging
Packaged in a class 100 clean room environment, nitrogen atmosphere

 

Speicification of C-plane Sapphire Substrate Off-Cut
Crystal Material
≥ 99.99%, High Purity, Monocrystalline Al2O3 (KY)
Orientation
C-axis (0001) off-cut 0.5°~6° ± 0.1° toward M (1-100) or C-axis (0001) off-cut 0.5°~6° ± 0.1° toward A (11-20)
Diameter
2 inch (50.8mm)
4 inch (100mm)
Thickness
430 ± 25 μm
650 ± 25 μm
Primary Flat Length
16.0 ± 1 mm
30.0 ± 1 mm
Primary Flat Orientation
A-plane ± 0.3°
SSP
TTV
≤10 μm
≤20 μm
BOW
-15~0 μm
-25~0 μm
Warp
≤15 μm
≤30 μm
Front Surface
Epitaxy polished Ra ≤ 0.30 nm
Back Surface
Fine ground Ra ≤ 1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.30 nm (DSP)
Packaging
Packaged in a class 100 clean room environment, nitrogen atmosphere

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