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Sapphire Substrate / Wafer

Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.

Speicification of Epitaxy Ready Polished Sapphire Substrate, DSP/SSP
Crystal Material
≥ 99.995%, High Purity, Monocrystalline Al2O3
Orientation
C-axis (0001) to M (1-100) 0.2°±0.1° and C-axis (0001) to A (11-20) 0°±0.1°
Diameter
2 inch
3 inch
4 inch
5 inch
6 inch
Thickness
430 μm
430 μm
650 μm
1000 μm
1000 μm
Primary Flat Length
16.0 mm
22.0 mm
30.0 mm
42.5 mm
50.0 mm
Primary Flat Orientation
A-axis ± 0.2°
SSP
TTV
≤5 μm
≤10 μm
≤10 μm
≤15 μm
≤15 μm
BOW
-7~0 μm
-10~0 μm
-10~0 μm
-20~0 μm
-30~0 μm
Warp
≤10 μm
≤10 μm
≤10 μm
≤20 μm
≤20 μm
Front Surface
Epitaxy polished Ra ≤ 0.20 nm
Back Surface
Fine ground Ra=0.8~1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.20 nm (DSP)
Packaging
Packaged in a class 100 clean room environment, nitrogen atmosphere

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