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Molecular Beam Epitaxy (MBE) System

CETC molecular beam epitaxy (MBE) system is utilize state-of-the-art technology for crystal growth by spraying from a beam source furnace to a substrate at a certain ratio under ultra-high vacuum conditions (10-9 Pa). It is a new generation key equipment for preparation of materials and devices in the future. It has the advantages of low growth temperature, single atomic layer growth, controllable composition and doping concentration, etc., in broad application prospects of infrared and its optoelectronic devices, heterojunction transistors and their integrated circuits, VCSEL lasers, superconducting chips, quantum computing, new superlattices devices and other fields.

The picture below shows the 6-inch HgCdTe material molecular beam epitaxial growth system developed by CETC, which is mainly used for the epitaxial growth of HgCdTe material in a new generation of large-area, high-resolution, two-color or multi-color detection infrared detectors. With a dual process chamber configuration, the substrate can be vacuum transported between the chambers. Each process chamber is designed with 10 source furnace positions, equipped with Hg source, CdTe source, Te source, Zn source, As cracking source, In source and other commonly used beam source furnaces for HgCdTe growth.

Technical specification of CETC molecular beam epitaxy (MBE) system for growth of mercury cadmium telluride material

Types of products and services to be provided in the future

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