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Silicon Carbide (SiC) Substrate

The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. CETC offers semiconductor silicon carbide wafers, 6H SiC and 4H SiC, in different quality grades for researcher and manufacturers. This material is manufactured upon a high-volume platform process that provides our customers the highest degree of material quality, supply assurance, and economies of scale.

2-inch Diameter 4H N-type Silicon Carbide Substrate Specification
SUBSTRATE PROPERTY
Ultra Grade
Production Grade
Research Grade
Dummy Grade
Diameter
50.8 mm ± 0.38 mm
Surface Orientation
on-axis: {0001} ± 0.2°;
off-axis: 4° toward <11-20> ± 0.5°
Primary Flat Orientation
<11-20> ± 5.0˚
Secondary Flat Orientation
90.0˚ CW from Primary ± 5.0˚, silicon face up
Primary Flat Length
16.0 mm ± 1.65 mm
Secondary Flat Length
8.0 mm ± 1.65 mm
Wafer Edge
Chamfer
Micropipe Density
≤1 micropipes/cm2
≤5 micropipes/cm2
≤10 micropipes/cm2
≤50 micropipes/cm2
Polytype Areas by High-Intensity Light
None permitted
≤10% area
Resistivity
0.015~0.028Ω·cm
(area 75%)
0.015~0.028Ω·cm
Thickness
350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV
≤10 μm
≤15 μm
BOW (absolute value)
≤10 μm
≤15 μm
Warp
≤25 μm
Surface Finish
Double Side Polish, Si Face CMP (chemical polishing)
Surface Roughness
CMP Si Face Ra≤0.5 nm
N/A
Cracks by High-Intensity Light
None permitted
Edge Chips/Indents by Diffuse Lighting
None permitted
None permitted
Qty.2 <1.0 mm width and depth
Qty.2 <1.0 mm width and depth
Total Usable Area
≥90%
≥90%
≥80%
N/A
Note: Customerized specification other than the above parameters is acceptable.

 

3-inch Diameter 4H N-type Silicon Carbide Substrate Specification
SUBSTRATE PROPERTY
Ultra Grade
Production Grade
Research Grade
Dummy Grade
Diameter
76.2 mm ± 0.38 mm
Surface Orientation
on-axis: {0001} ± 0.2°;
off-axis: 4° toward <11-20> ± 0.5°
Primary Flat Orientation
<11-20> ± 5.0˚
Secondary Flat Orientation
90.0˚ CW from Primary ± 5.0˚, silicon face up
Primary Flat Length
22.0 mm ± 2.0 mm
Secondary Flat Length
11.0 mm ± 1.5 mm
Wafer Edge
Chamfer
Micropipe Density
≤1 micropipes/cm2
≤5 micropipes/cm2
≤10 micropipes/cm2
≤50 micropipes/cm2
Polytype Areas by High-Intensity Light
None permitted
≤10% area
Resistivity
0.015~0.028Ω·cm
(area 75%)
0.015~0.028Ω·cm
Thickness
350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV
≤10 μm
≤15 μm
BOW (absolute value)
≤15 μm
≤25 μm
Warp
≤35 μm
Surface Finish
Double Side Polish, Si Face CMP (chemical polishing)
Surface Roughness
CMP Si Face Ra≤0.5 nm
N/A
Cracks by High-Intensity Light
None permitted
Edge Chips/Indents by Diffuse Lighting
None permitted
None permitted
Qty.2 <1.0 mm width and depth
Qty.2 <1.0 mm width and depth
Total Usable Area
≥90%
≥90%
≥80%
N/A
Note: Customerized specification other than the above parameters is acceptable.

 

4-inch Diameter 4H N-type Silicon Carbide Substrate Specification
SUBSTRATE PROPERTY
Ultra Grade
Production Grade
Research Grade
Dummy Grade
Diameter
100.0 mm +0.0/-0.5 mm
Surface Orientation
off-axis: 4° toward <11-20> ± 0.5°
Primary Flat Orientation
<11-20> ± 5.0˚
Secondary Flat Orientation
90.0˚ CW from Primary ± 5.0˚, silicon face up
Primary Flat Length
32.5 mm ± 2.0 mm
Secondary Flat Length
18.0 mm ± 2.0 mm
Wafer Edge
Chamfer
Micropipe Density
≤1 micropipes/cm2
≤5 micropipes/cm2
≤10 micropipes/cm2
≤50 micropipes/cm2
Polytype Areas by High-Intensity Light
None permitted
≤10% area
Resistivity
0.015~0.028Ω·cm
(area 75%)
0.015~0.028Ω·cm
Thickness
350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV
≤10 μm
≤15 μm
BOW (absolute value)
≤25 μm
≤30 μm
Warp
≤45 μm
Surface Finish
Double Side Polish, Si Face CMP (chemical polishing)
Surface Roughness
CMP Si Face Ra≤0.5 nm
N/A
Cracks by High-Intensity Light
None permitted
Edge Chips/Indents by Diffuse Lighting
None permitted
None permitted
Qty.2 <1.0 mm width and depth
Qty.2 <1.0 mm width and depth
Total Usable Area
≥90%
≥90%
≥80%
N/A
Note: Customerized specification other than the above parameters is acceptable.

 

4-inch Diameter 4H N-type Silicon Carbide Substrate Specification
SUBSTRATE PROPERTY
Production Grade
Research Grade
Dummy Grade
Diameter
100.0 mm +0.0/-0.5 mm
Surface Orientation
on-axis: {0001} ± 0.2°
Primary Flat Orientation
<11-20> ± 5.0˚
Secondary Flat Orientation
90.0˚ CW from Primary ± 5.0˚, silicon face up
Primary Flat Length
32.5 mm ± 2.0 mm
Secondary Flat Length
18.0 mm ± 2.0 mm
Wafer Edge
Chamfer
Micropipe Density
≤5 micropipes/cm2
≤10 micropipes/cm2
≤50 micropipes/cm2
Polytype Areas by High-Intensity Light
None permitted
≤10% area
Resistivity
0.015~0.028Ω·cm
(area 75%)
0.015~0.028Ω·cm
Thickness
350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV
≤10 μm
≤15 μm
BOW (absolute value)
≤25 μm
≤30 μm
Warp
≤45 μm
Surface Finish
Double Side Polish, Si Face CMP (chemical polishing)
Surface Roughness
CMP Si Face Ra≤0.5 nm
N/A
Cracks by high-intensity light
None permitted
Edge Chips/Indents by Diffuse Lighting
None permitted
Qty.2 <1.0 mm width and depth
Qty.2 <1.0 mm width and depth
Total Usable Area
≥90%
≥80%
N/A
Note: Customerized specification other than the above parameters is acceptable.

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