GaAs/InP MOCVD System

CETC MOCVD epitaxial growth equipment is designed for the large-scale, high-quality production of GaAs and InP epitaxial materials, meeting the demands of RF, optical communication, and optoelectronic devices. The horizontal planetary system supports 6/4/3/2-inch wafers, offering excellent uniformity in thickness, wavelength, and doping control. It enables high-temperature, low-pressure transfer capabilities for high-efficiency, low-defect, and high-throughput epitaxial production.

1. Horizontal Planetary System (6/4/3/2-inch)

• Multi-size wafer compatibility with various source gas delivery and exhaust treatment options for As/P-based epitaxial growth.
• Superior control over thickness, wavelength, and doping uniformity.
• Supports high-temperature and low-pressure wafer transfer for high-yield, low-defect production.

2. Modular Design with High Integration

• Fully modular architecture integrating reaction chamber, gas delivery, vacuum, water cooling, manual transfer, and electrical control systems.
• Optional automated transfer system for single or dual-chamber automated production.
• Dual-chamber interconnecting transfer platform available.

3. Absolute Safety

• Reliable pipeline and chamber sealing with leak rate ≤ 1×10⁻⁹ mbar·L/s.
• Multi-angle safety monitoring: gas/smoke detectors, wind pressure/speed sensors, etc.
• Comprehensive safety interlock logic and emergency response mechanisms.
• Dual-control system: Safety PLC + Process PLC with redundant modules.
• Multi-stage testing: cold check, high/low temperature cycle test, hot check, and safety interlock verification.

4. Excellent Cost Control

• Long maintenance cycles and easy serviceability.
• Multi-size reaction chamber compatibility with easy interchangeability.
• Low operational environment requirements.
• Independently configurable and replaceable As/P wells.
• 48-segment heating jacket and tailpipe heating.
• Compatible with 3/4/6-inch substrates via replacement of components such as the carrier disk and quartz tubes.

5. Excellent Cost Control

• Fully independent software architecture with recipe simulation, error correction, and comparison functions.
• Customizable to meet specific client requirements.
• Rich data query functions with one-click parameter preference settings.
• Real-time equipment status monitoring and pre-process checks.

Technical Specifications

• Reaction chamber specs: 8×6″ / 15×4″ / 12×4″ / 14×3″
• Flow field model: Horizontal
• Wafer transfer: Manual / robotic auto-transfer
• Heating method: Induction coil heating
• Wafer rotation: Planetary rotation (carrier rotation + individual wafer rotation)
• Temperature control accuracy: ±0.1°C
• Carrier temperature uniformity: ≤ ±1°C
• Carrier temperature repeatability: ≤ ±1°C
• Wafer surface temperature repeatability: ≤ ±1°C
• High-temperature transfer disk temperature: ≥ 400°C
• Total process gas flow: 38 SLM
• Chamber pressure: 50 mbar
• Light tube set temperature: 760°C (stable for 10 min)
• Nitrogen gas float: 400 sccm