CETC, an active player in the Belt and Road (B&R) Initiative

Ion Implanter

1. SiC High-Temperature and High-Energy (H/E) Ion Implanter

2. Specialized Ion Implanter

3. Medium Current (M/C) Ion Implanter

 

Technical Characteristics of a Typical Medium Current (M/C) Ion Implanter
1. Main Applications Medium current (M/C) ion implanter can be used for doping process of semiconductor materials, such as silicon, gallium-arsenide, gallium-nitride, etc. and ions of arsenic, boron, phosphorus, nitrogen, hydrogen, etc.
2.1 General Technical Requirements
  • The system provides implantation of ions of boron, phosphorus, arsenic, nitrogen, argon and hydrogen.
  • Resolution of M/ΔM magnetic analyzer: not lower than 100.
  • Processing of wafers with diameters: 150mm, 100mm, 75mm, 50mm, is supported.
  • Manual loading of wafers directly into the target chamber is possible.
  • Automatic loading / unloading of wafers from cassette to cassette (optional).
  • Mechanical system capacity is not less than 130 wafers per hour.
  • The ion implanter capacity under the standard process of Boron doping (dose: 100 µC; current: 250 µA; ions energy: 80 keV; wafer diameter: 100 mm) should be not less than 80 wafers per hour.
  • With regards to ions of unit charge, the lower limit of energy implantation is not more than 5 keV.
  • With regards to ions of unit charge, the upper limit of energy implantation is not less than 200 keV.
  • Dose diapason is not narrower than 1Е11~1Е16 ions per m2.
  • Radiation is less than 0.5 µSv/h at the distance of 10 cm from any point of the protective housing surface.
  • During implantation, the tilt angle of a wafer is in the range not narrower than that from 0° to 45° through software programming.
  • With regards to aluminium, the inserted pollution is not more than 5×1012 at/cm2.
  • With regards to other metals, the inserted pollution is not more than 5×1010 at/cm2.
2.2 Requirements for Dose Uniformity and Repeatability on Wafer
  • Requirement for dose non-uniformity all over the implanted area: 1σ not more than 1.0%.
  • Requirement for dose repeatability from wafer to wafer: 1σ not more than 1.0%.
2.3 Requirements for Maximum Ion Current at Wafer Surface
  • Maximum ion current at the surface of wafer with diameter of 150 mm is not lower than the data in the tables as below.
  • Energy (keV)
    Current (μA)
    B+
    P+
    As
    N+
    H+
    30~50
    300
    350
    350
    600
    300
    50~70
    400
    750
    750
    800
    400
    70~90
    500
    1000
    1000
    1000
    500
    90~120
    500
    1250
    1250
    1200
    600
    120~200
    600
    1500
    1500
    1000
    600
  • Maximum current of a non-scanning beam is not lower than 3000 µA.
3. Detailed Requirements for Final Assembled Ion Implanter
3.1 Requirements for Wafer Loading/Unloading System
  • The ion implanter is equipped with a system of automatic loading/unloading of wafers with diameter 150 mm, 100 mm, 75 mm and 50 mm from a cassette to a cassette.
  • Using special carriers of wafers with diameter 50 mm, 75 mm, 100 mm and 150 mm is possible. Time to setup the system for operation with another diameter of wafers does not exceed 15 minutes.
  • Manual loading directly into the process chamber is possible.
  • Inside the process chamber there is a substrate holder.
  • The robotic system provides automatic and manual loading/unloading of wafers from a cassette into the process chamber and placing of wafers onto the substrate holder for further processing.
  • The robotic system provides wafers unloading to a cassette after processing.
  • The substrate holder is equipped with a mechanical holding device.
  • The mechanical holding device provides a secure fixation of a wafer on the substrate holder during wafers processing in each specified temperature range and at each specified tilt angle of the substrate holder.
  • The mechanical holding device is operated in the automated and manual mode.
  • The substrate holder is equipped with a water-cooling system to abstract heat from a wafer during processing.
  • The ion implanter is equipped with a chiller to maintain the required temperature of cooling water.
  • The substrate holder is equipped with an automated system of helium feeding under a wafer to provide highly efficient heat abstraction from a wafer during processing.
3.2 Requirements for Process Gases Feed System
  • There are not less than 4 separate gas lines in the process gases feed system.
  • There are not less than 3 separate gas lines for toxic and/or corrosive gases feeding in the process gases feed system.
  • There is not less than 1 separate gas line for inert and non-toxic gases feeding in the process gases feed system.
  • There is one line for PH3-gas feeding from high-pressure bottles such as LBX-type in the process gases feed system.
  • There is one line for BF3-gas feeding from high-pressure bottles such as LBX-type in the process gases feed system.
  • There is one line for AsH3-gas feeding from high-pressure bottles such as LBX-type in the process gases feed system.
  • There is one separate line for inert and non-toxic gases (Ar, H2, N2) in the process gases feed system.
  • The process gases feed system is made of stainless steel (316L type).
  • The process gases feed system contains all necessary shutoff and control valves.
  • All shutoff and control valves are of high quality and mass-produced.
  • There are calibrated gas flow regulators in each gas line of the process gases feed system.
  • The process gases feed system is automatic.
  • The process gases feed system is controlled through computer software at the operator's control cabinet.
  • The process gases feed system is equipped with an internal gas cabinet for placing not less than 3 LBX-type gas bottles for toxic and/or corrosive gases.
  • There is an air extraction system in the internal gas cabinet.
3.3 Requirements for Ion Sources
  • The scope of supply contains not less than two Freeman ion sources or its analogue.
  • One ion source is installed on the implanter ion, and the other is spare part.
  • Both ion sources are intended for operation with gaseous medium.
  • Both ion sources provide operation with BF3, AsH3, PH3, N2, H2, Ar
  • Service life of the thermionic cathode is not less than 40 hours of continuous operation.
  • Refitting of the sources by an option of sputtering solid targets is possible.
  • Refitting of the sources by high-temperature evaporators with temperature level not less than 1000°С is possible.
  • Refitting of the sources by necessary assemblies for silicone and magnesium implantation is possible.
  • The maximum extraction voltage is not less than 30 kV.
3.4 Requirements for Operator Interface / Man-Machine (M/M) Interface
  • The ion implanter is equipped with a remote control cabinet with a touch-screen panel and other equipment required for controlling the ion implanter.
  • The remote control cabinet is equipped with a personal computer with preinstalled operating system and specialized software to control the ion implanter.
  • The remote control cabinet is equipped with devices to adjust and monitor the beam parameters.
  • The remote control cabinet is equipped with a module for data back-up.
3.5 Requirements for Ion Beam Line
  • The ion implanter contains an ion beam line.
3.5.1 Requirements for Magnetic Analyzer
  • The ion beam line contains a magnetic analyzer.
  • The magnet analyzer is sector-type with the twist angle 90°.
  • The magnetic analyzer provides operation with ionic mass in the range not worse than 4.3 MeV·amu.
  • Resolution M/ΔM of the magnetic analyzer is not worse than 100.
  • The magnetic analyzer provides the minimum loss of the beam current.
3.5.2 Requirements for Beam Valve
  • The ion beam line of the ion implanter contains an ion beam valve.
  • The ion beam valve is located in focus of the magnetic analyzer.
  • The ion beam valve is partially or fully blocking the ion beam to adjust the beam current.
3.5.3 Requirements for Acceleration Tube
  • The ion beam line of the ion implanter contains an acceleration tube.
  • The acceleration tube consists of consequence of electropoliched aluminum electrodes and ceramic insulators which provide uniform acceleration of ions.
  • The maximum accelerating voltage applied to the tube is not less than 180 kV.
  • The acceleration tube dimensions are optimized to prevent excessive loss of the ion beam focus due to space charges.
3.5.4 Requirements for Focusing System
  • The ion beam line of the ion implanter contains a quadrupole focusing system.
  • The focusing system is implemented on the base of two sets of magnetic quadrupole lens.
  • Each set of the magnetic quadrupole lens contains four lens.
  • The quadrupole focusing system is optimized for operation in the whole range of ion energy available.
3.6 Requirements for Pumping-Out System
  • The ion implanter contains a pumping-out system.
  • The pumping-out system maintains vacuum at the ion source area not worse than 2×10-6 mbar.
  • The pumping-out system maintains vacuum at the ion beam line not worse than 2×10-7 mbar.
  • The pumping-out system maintains vacuum at the process chamber area not worse than 2×10-7 mbar.
  • The pumping-out system contains a forevacuum pump of chemical series with capacity not less than 100 m3/h to pump out the ion source area.
  • The pumping-out system contains a turbo-molecular pump with capacity not less than 1200 L/sec to pump out the ion source area.
  • The pumping-out system contains a forevacuum dry pump with capacity not less than 100 m3/h to pump out the ion beam line and the process chamber.
  • The pumping-out system contains not less than two cryogenic pumps with a helium compressor to pump out the ion beam line and the process chamber.
  • The pumping-out system contains a forevacuum pump for the module of cassette loading and wafer transport.
  • The pumping-out system contains a turbo-molecular pump for the module of cassette loading and wafers transport.
3.6.1 Requirements for Expansion Valves and Gate Valves
  • The ion implanter contains expansion valves and gate valves required to isolate definite assemblies.
  • All assemblies under vacuum (chambers, beam line, ion sources) and pumping-out devices are equipped with up-to-date expansion valves, inlet valves and high vacuum gate valves to provide a simple access during the system maintenance and removal of errors connected with the vacuum system.
3.6.2 Requirements for Vacuum Measurement System
  • The ion implanter contains a vacuum measurement system.
  • Each module under vacuum is equipped with several Pirani-Penning vacuum manometers which allow to measure vacuum in the range from 10-8 mbar to the atmospheric pressure.
3.7 Requirements for Dose Measurement and Control System
  • The ion implanter contains a dose measurement and control system.
  • The dose measurement system allows measuring density of the current beam in the range not lower than that from 50 nA to 10 mA.
  • The dose measurement system allows measuring the dose of particles implanted in the range not lower than from 1×1011 at/cm2 to 1×1018 at/cm2.
3.8 Requirements for Electrostatic Scanning System
  • The ion implanter contains an electrostatic scanning system.
  • The ion implanter supportsone-dimensional electrostatic scanning plus one-dimensional mechanical scanning.
  • The electrostatic scanning system is operated through the software interface from the operator's control cabinet.
  • The electrostatic scanning system maintains the dose uniformity required at the wafer twist angle in the range not narrower than that from 0° to 45°.
  • The electrostatic scanning system maintains the implantation mode at a selected area.
  • The electrostatic scanning system contains reflecting plates preventing from metal pollution which may occur due to spurring the walls with the ion beam.
3.8.1 Requirements for Deionized Water-Treatment System
  • The ion implanter contains a deionized water-treatment system.
  • The deionized water-treatment system provides optimal operating characteristics of water.
  • The deionized water-treatment system is based on two-step filtration process.
  • The deionized water-treatment system is equipped with a resistance sensor, and such sensor monitors water resistance and blocks the system operation if the water parameters are inconsistent to the requirements.
3.8.2 Requirements for Processing Medium Feed System
  • All modules of the system are equipped with up-to-date valves and various sensors adapted for safe operation with possible "blocking/warning".
  • The ion implanter contains necessary pipes, connections and shutoff valves to provide feeding of compressed air, liquid refrigerating agent, and gaseous nitrogen.
3.8.3 Requirements for Gas Safety System
  • The ion implanter is equipped with fixed gas detectors for detection of toxic and dangerous gases: phosphine (PH3), boron trifluoride (BF3), arsenic trihydride (AsH3).
  • The ion implanter is equipped with a compact clearance system for toxic and dangerous gases: phosphine (PH3), boron trifluoride (BF3), arsenic trihydride (AsH3).
3.9 Requirements for Controlling Electronics
  • The ion implanter contains controlling electronics.
  • The controlling electronics provide automatic operation of the implantation, scanning, scanning errors detection, and doses management.
  • The controlling electronics are managed by the software installed on the personal computer at the operator's control cabinet.
  • The ion implanter operation is controlled through the operator's / man-machine interface of the software installed on the personal computer at the operator's control cabinet.
3.10 Requirements for Protective Housing
  • The ion implanter contains an assembled protecting housing which securely isolates the area of high-voltage and ionization radiation from external space.
  • The protecting housing has an assemblage of parts.
  • The protecting housing consists of flat panels and a split frame.
  • The protecting housing can be assembled and disassembled without permanent joints and welding.
  • The protecting housing has doors for access inside.
  • The protecting housing has special sensors to control the state of the doors (open/closed).
  • The system provides blocking of process gases feeding and voltage supply if the protective housing doors are opened.
4. Requirements for Software
  • The specialized software is preinstalled in the personal computer of the operator's control cabinet.
  • The software is modular and may be added with additional functions and modules.
  • The software has a graphical shell, through which the system operation can be carried out.
  • The software contains a layered access system so that operators of different qualification levels may operate the system.
  • The software provides management of all the system assemblies of the ion implanter.
  • The software allows full manual operation of the ion implanter when a certain access level is used.
  • The software contains a module of safety parameters management to prevent from the operation modes which may be dangerous for the equipment and the operator. This module, based on software, can block feeding of gases and/or high voltage if certain sensors are activated.
  • The software allows creating and retaining any treatment recipes.
  • The software allows creating the recipes library.
  • The software contains the error manager for diagnostics and recovery of the normal ion implanter operation.
  • The software provides an automatic transition to the standby mode.
  • The software represents all necessary data and allows printing them out.
5. Wear Parts Kit
  • The ion implanter is supplied with a spares and tool kit designed for operation during 3 months (8 hours a day, 5 days a week).
6. Power Supply
  • The ion implanter complies with the parameters of power supply circuit at the place of its operation: three-phase circuit (3Ph+N+G), 380 V, 50 Hz.
7. Equipment Dimensions and Weight
  • Total length of the ion implanter ready-assembled does not exceed 5000 mm.
  • Total width of the ion implanter ready-assembled does not exceed 3000 mm.
  • Total height of the ion implanter ready-assembled does not exceed 2700 mm.
  • Total weight of the ion implanter ready-assembled does not exceed 6.5 tons.
  • Maximum load to the ground does not exceed 8.3 kg/cm2.
About Us | Legal Statement | Privacy Policy | Contact Us | Copyright © 2010-2020 CETC Solar Energy Holdings Co., Ltd.