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Gallium Nitride (GaN) Substrate / Wafer
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.
Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments.
Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteristics for THz devices.
GaN-based violet laser diodes are used to read Blu-ray Discs. The mixture of GaN with In (InGaN) or Al (AlGaN) with a band gap dependent on ratio of In or Al to GaN allows the manufacture of light-emitting diodes (LEDs) with colors that can go from red to ultra-violet. GaN transistors are suitable for high frequency, high voltage, high temperature and high efficiency applications. GaN nanotubes are proposed for applications in nanoscale electronics, optoelectronics and biochemical-sensing applications. When doped with a suitable transition metal such as manganese, GaN is a promising spintronics material (magnetic semiconductors).
Specification of N-type Gallium Nitride (GaN) Crystal Substrate, DSP/SSP | |||||
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Crystal Material | High Purity, Monocrystalline GaN |
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Orientation | C-axis (0001) to M (1-100) 0.3°±0.1° |
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Dislocation Density | ≤3x106 cm-2 |
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Resistivity (300K) | N-type (non-doped): ≤0.5Ω·cm |
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Carrier Concentration | 1x1017 cm-3 |
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Mobility | 500 cm2/V·s |
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Diameter | 10x15 mm |
10x15 mm |
2 inch |
2 inch |
|
Thickness | 330 μm |
430 μm |
330 μm |
430 μm |
|
SSP | TTV |
≤10 μm |
≤10 μm |
≤15 μm |
≤15 μm |
BOW |
≤10 μm |
≤10 μm |
≤20 μm |
≤20 μm |
|
RMS |
≤2 nm (10x10 μm) |
≤2 nm (10x10 μm) |
≤2 nm (10x10 μm) |
≤2 nm (10x10 μm) |
|
Front Surface | Epitaxy polished Ra ≤ 0.20 nm |
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Back Surface | Fine ground Ra=0.8~1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.20 nm (DSP) |
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Packaging | Packaged in a class 100 clean room environment, nitrogen atmosphere |
Specification of N-type Gallium Nitride (GaN) on Sapphire Wafer, DSP/SSP | |||
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Substrate Material | ≥ 99.995%, High Purity, Monocrystalline Al2O3 |
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Thickness of GaN Layer | 4.5 μm, 20 μm or customerized |
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Dislocation Density | ≤5x108 cm-2 |
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Orientation of Sapphire Substrate | C-axis (0001) to M (1-100) 0.2°±0.1° |
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Resistivity (300K) | N-type (non-doped): ≤0.5Ω·cm |
||
Diameter of Sapphire Substrate | 2 inch |
4 inch |
|
Thickness of Sapphire Substrate | 430 μm |
650 μm |
|
SSP | TTV |
≤5 μm |
≤10 μm |
BOW |
-7~0 μm |
-10~0 μm |
|
RMS |
≤10 μm |
≤10 μm |
|
Front Surface | Epitaxy polished Ra ≤ 0.20 nm |
||
Back Surface | Fine ground Ra=0.8~1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.20 nm (DSP) |
||
Packaging | Packaged in a class 100 clean room environment, nitrogen atmosphere |