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Gallium Nitride (GaN) Substrate / Wafer

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.

Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments.

Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteristics for THz devices.

GaN-based violet laser diodes are used to read Blu-ray Discs. The mixture of GaN with In (InGaN) or Al (AlGaN) with a band gap dependent on ratio of In or Al to GaN allows the manufacture of light-emitting diodes (LEDs) with colors that can go from red to ultra-violet. GaN transistors are suitable for high frequency, high voltage, high temperature and high efficiency applications. GaN nanotubes are proposed for applications in nanoscale electronics, optoelectronics and biochemical-sensing applications. When doped with a suitable transition metal such as manganese, GaN is a promising spintronics material (magnetic semiconductors).

Speicification of N-type Gallium Nitride (GaN) Crystal Substrate, DSP/SSP
Crystal Material
High Purity, Monocrystalline GaN
Orientation
C-axis (0001) to M (1-100) 0.3°±0.1°
Dislocation Density
≤3x106 cm-2
Resistivity (300K)
N-type (non-doped): ≤0.5Ω·cm
Carrier Concentration
1x1017 cm-3
Mobility
500 cm2/V·s
Diameter
10x15 mm
10x15 mm
2 inch
2 inch
Thickness
330 μm
430 μm
330 μm
430 μm
SSP
TTV
≤10 μm
≤10 μm
≤15 μm
≤15 μm
BOW
≤10 μm
≤10 μm
≤20 μm
≤20 μm
RMS
≤2 nm (10x10 μm)
≤2 nm (10x10 μm)
≤2 nm (10x10 μm)
≤2 nm (10x10 μm)
Front Surface
Epitaxy polished Ra ≤ 0.20 nm
Back Surface
Fine ground Ra=0.8~1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.20 nm (DSP)
Packaging
Packaged in a class 100 clean room environment, nitrogen atmosphere

 

Speicification of N-type Gallium Nitride (GaN) on Sapphire Wafer, DSP/SSP
Substrate Material
≥ 99.995%, High Purity, Monocrystalline Al2O3
Thickness of GaN Layer
4.5 μm, 20 μm or customerized
Dislocation Density
≤5x108 cm-2
Orientation of Sapphire Substrate
C-axis (0001) to M (1-100) 0.2°±0.1°
Resistivity (300K)
N-type (non-doped): ≤0.5Ω·cm
Diameter of Sapphire Substrate
2 inch
4 inch
Thickness of Sapphire Substrate
430 μm
650 μm
SSP
TTV
≤5 μm
≤10 μm
BOW
-7~0 μm
-10~0 μm
RMS
≤10 μm
≤10 μm
Front Surface
Epitaxy polished Ra ≤ 0.20 nm
Back Surface
Fine ground Ra=0.8~1.2 μm (SSP) / Epitaxy polished Ra ≤ 0.20 nm (DSP)
Packaging
Packaged in a class 100 clean room environment, nitrogen atmosphere

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